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The main difference between solar photovoltaic N-type and P-type monocrystalline silicon wafers

Monocrystalline silicon wafers have the physical properties of metalloids, have weak electrical conductivity, and their electrical conductivity increases with the increase of temperature; they have significant semi-conductive properties. Doping a small amount of boron in an ultra-pure single crystal silicon wafer can increase its conductivity to form a P-type silicon wafer semiconductor; if doping a trace amount of phosphorus or arsenic can also increase the electrical conductivity to form an N-type silicon wafer semiconductor. So, what are the differences between P-type silicon wafers and N-type silicon wafers?

There are three main differences between P-type and N-type monocrystalline silicon wafers:
1. The doping is different: phosphorus doped in single crystal silicon is N type, and boron doped in single crystal silicon is P type.
2. Different conduction: N type is electron conduction, P type is hole conduction.
3. Different performance: the more N-type doped with phosphorus, the more free electrons, the stronger the conductivity, and the lower the resistivity. The more P-type boron is doped, the more holes can be generated by displacing silicon, the stronger the conductivity, and the lower the resistivity.

At present, the mainstream product in the photovoltaic industry is P-type silicon wafers. The manufacturing process of P-type silicon wafers is simple and the cost is low. N-type silicon wafers usually have a longer minority carrier life, and the cell efficiency can be made higher, but the process is more complicated. N-type silicon wafers are doped with phosphorus elements, the compatibility between phosphorus and silicon is poor, and the distribution of phosphorus is uneven when pulling the rod. P-type silicon wafers are doped with boron elements. The segregation coefficient of boron and silicon is equivalent, and the dispersion uniformity is easy to control.